SST213 SOT-143 4L ROHS

SD-SST211/213/215 N-Channel Lateral DMOS Switch, Zener Protected Product Summary PART NUMBER V(BR)DS Min (V) V(GS)th Max (V) C rss Max (pF) 1.5 rDS(on) Max (Ω) 15 45 @ V GS=10V SD211DE 30 0.5 2 SD213DE 10 1.5 45 @ VGS=10V 0.5 2 SD215DE 20 1.5 45 @ VGS=10V 0.5 2 SST211 30 1.5 50 @ VGS=10V 0.5 2 SST213 10 1.5 50 @ VGS=10V 0.5 2 SST215 20 1.5 50 @ VGS=10V 0.5 2 Features Benefits Applications • Ultra-High Speed Switching—ION: 1ns • Ultra-Low Reverse Capacitance: 0.2pF • Low Guaranteed rDS @5V • Low Turn-On Threshold Voltage • N-Channel Enhancement Mode • High-Speed System Performance • Low Insertion Loss at High Frequencies • Low Transfer Signal Loss • Simple Driver Requirement • Single Supply Operation • Fast Analog Switch • Fast Sample-and-Holds • Pixel-Rate Switching • DAC Deglitchers • High-Speed Driver tON Max (ns) Description The SD211DE/SST211 series consists of enhancement-mode MOSFETs designed for high-speed low-glitch switching in audio, video and highfrequency applications. The SD211 may be used for a ±5-V analog switching or as a high-speed driver of the SD214. The SD214 is normally used for ±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra- fast switching speeds. An integrated ZENER diode provides ESD protection. These devices feature a poly-silicon gate for manufacturing reliability. For similar products see: quad array—SD5000/5400 series, non-Zener protection—SD210DE/214DE. TO-206AF (TO-72 4L) TO-253 (SOT-143 4L) TO-206AF Top View (TO-72) SD211DE, SD213DE, SD215DE Top View SST211, SST213, SST215 Doc 20114 09/14/2022 Rev# A11 ECN# SD-SST211/13/15 www.linearsystems.com Page 1 of 4 SD-SST211/213/215 N-Channel Lateral DMOS Switch, Zener Protected Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Gate Drain, Gate Source Voltage Gate-Substrate Voltagea Drain-Source Voltage Voltage (SD211DE/SST211)…..……-30/25V (SD213DE/SST213)………..-15/25V (SD215DE/SST215)………..-25/30V (SD211DE/SST211)…..…..-0.3/25V (SD213DE/SST213)……….-0.3/25V (SD215DE/SST215)……….-0.3/30V (SD211DE/SST211)…………..….30V (SD213DE/SST213)………………10V (SD215DE/SST215)………………20V (SD211DE/SST211)…………..….10V (SD213DE/SST213)………………10V (SD215DE/SST215)………………20V Drain-Substrate Voltage Source-Substrate Voltage Drain Current Lead Temperature (1/16” from ease for 10 seconds) Storage Temperature Operating Junction Temperature Power Dissipation (SD211DE/SST211)………..…….30V (SD213DE/SST213)…….…………15V (SD215DE/SST215)………….……25V (SD211DE/SST211)………..…….15V (SD213DE/SST213)………………15V (SD215DE/SST215)………………25V ………………………………………...50mA ………………………………………...300°C ……………………………..-65 to 150°C ……………………………..-55 to 125°C ……………………………………..300mW Notes: a. Derate 3mW/°C above 25°C Specificationsa LIMITS PARAMETER SYMBOLb TEST CONDITIONSb TYPb V(BR)DS VGS = VBS = 0V, ID = 10 µA VGS = VBS = -5V, ID = 10 nA 35 30 30 10 10 20 V(BR)SD VGS = VBD = -5V, IS = 10 nA 22 10 10 20 35 15 15 25 35 15 15 25 211 Series 213 Series 215 Series Min Max Min Max Min Max UNIT Static Drain - Source Breakdown Voltage Source - Drain Breakdown Voltage Drain - Substrate Breakdown Voltage Source - Substrate Breakdown Voltage Drain – Source Leakage V(BR)DBO V(BR)SBO IDS(off) Source - Drain Leakage ISD(off) Gate Leakage IGBS Threshold Voltage Drain – Source On-Resistance VGS(th) rDS(on) VGB = 0V, ID= 10 nA Source Open VGB = 0V, Is = 10 µA Drain Open VDS = 10V VGS = VBS = -5V VDS = 20V VSD = 10V VGD = VBD = -5V VSD = 20V VDB = VSB = 0V, VGB = 30V VDS = VGS, ID = 1 µA , VSB = 0V VGS = 5V (SD Series) VGS = 5V (SST Series) VGS = 10V VSB = 0V (SD Series) ID = 1mA VGS = 10V (SST Series) VGS = 15V VGS = 20V VGS = 25V Doc 20114 09/14/2022 Rev# A11 ECN# SD-SST211/13/15 V 0.4 0.9 0.5 10 10 10 10 0.01 0.8 10 100 0.5 1.5 nA 10 100 100 0.1 1.5 0.1 1.5 58 70 70 70 60 75 75 75 38 45 45 45 40 50 50 50 V Ω 30 26 24 www.linearsystems.com Page 2 of 4 SD-SST211/213/215 N-Channel Lateral DMOS Switch, Zener Protected Specificationsa LIMITS PARAMETER SYMBOLb TEST CONDITIONSb TYPc 211 Series Min Max 213 Series Min Max 215 Series SD Series SST Series 11 10.5 10 9 10 9 10 9 All 0.9 UNIT Dynamic gfs Forward Transconductance Gate Node Capacitance Drain Node Capacitance Source Node Capacitance Reverse Transfer Capacitance gos VDS = 10V, VSB = 0V, , ID = 20mA, f = 1kHz C(GS+GD+GB) C(GD+DB) C(GS+SB) VDS = 10V, f = 1MHz VGS = VBS = 15V Crss SD Series mS 2.5 3.5 3.5 3.5 1.1 1.5 1.5 1.5 3.7 5.5 5.5 5.5 SST Series 4.2 SD Series 0.2 0.5 0.5 0.5 0.5 0.6 2 6 1 1 1 1 1 1 pF Switching Turn-On Time Turn-Off Time tD(on) tr tD (off) tf SD Series Only VSB = 0V, VIN 0 to 5V, RG = 25Ω VDD = 5V, RL = 680Ω ns Notes: a. b. c. TA = 25°C unless otherwise notes. B is the body (substrate) and V(BR) is breakdown voltage. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Doc 20114 09/14/2022 Rev# A11 ECN# SD-SST211/13/15 www.linearsystems.com Page 3 of 4 SD-SST211/213/215 N-Channel Lateral DMOS Switch, Zener Protected Package Dimensions: TO-206AF (TO-72 4L) TO-253 (SOT-143 4L) Dimensions Shown in Millimeters Dimensions Shown in Inches Ordering Information: Standard Part Call-Out Custom Part Call-Out SD211DE TO-72 4L RoHS SD213DE TO-72 4L RoHS SD215DE TO-72 4L RoHS SST211 SOT-143 4L RoHS SST213 SOT-143 4L RoHS SST215 SOT-143 4L RoHS SD211DE TO-72 4L RoHS SELXXX SD213DE TO-72 4L RoHS SELXXX SD215DE TO-72 4L RoHS SELXXX SST211 SOT-143 4L RoHS SELXXX SST213 SOT-143 4L RoHS SELXXX SST215 SOT-143 4L RoHS SELXXX Doc 20114 09/14/2022 Rev# A11 ECN# SD-SST211/13/15 (Custom Parts Include SEL + 4 Digit Numeric Code) www.linearsystems.com Page 4 of 4